KDS8928A features n-channel 5.5a,30v r ds(on) = 0.030 @v gs =4.5v r ds(on) = 0.038 @v gs =2.5v p-channel -4 a, -20 v r ds(on) = 0.055 @v gs =- 4.5 v r ds(on) = 0.070 @v gs =-2.5v high density cell design for extremely low r ds(on) . high power and handling capability in a widely used surface mount package dual (n & p-channel) mosfet in surface mount package. absolute maximum ratings ta = 25 parameter symbol n-channel p- channel unit drain to source voltage v dss 30 30 v gate to source voltage v gs 8-8v drain current continuous (note 1a) 5.5 -4 a drain current pulsed 20 -20 a power dissipation for single operation p d w power dissipation for single operation (note 1a) (note 1b) (note 1c) operating and storage temperature t j ,t stg thermal resistance junction to ambient (note 1a) r ja /w thermal resistance junction to case (note 1) r jc /w -55to150 78 40 2 i d 1.6 p d w 1 0.9 smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 1 of 3 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit v gs =0v,i d = 250 a n-ch 30 v gs =0v,i d = -250 a p-ch -20 i d = 250 a, referenced to 25 n-ch 32 i d = -250 a, referenced to 25 p-ch -23 v ds = 24v, v gs =0v n-ch 1 v ds =-16v,v gs =0v p-ch -1 v gs = 8v, v ds =0v n-ch 100 v gs = 8v,v ds =0v p-ch 100 v ds =v gs ,i d = 250 a n-ch 0.4 0.67 v ds =v gs ,i d = -250 a p-ch -0.4 -0.6 i d = 250 a, referenced to 25 n-ch -3 i d = -250 a, referenced to 25 p-ch 4 v gs =4.5v,i d =5.5a 0.025 0.03 v gs =2.5v,i d = 4.5a 0.031 0.038 v gs =-4.5v,i d =-4 a 0.043 0.055 v gs =-2.5v,i d =-3.4 a .059 0.072 v gs =4.5v,v ds =5v n-ch 20 v gs =-4.5v,v ds =-5v p-ch -20 v ds =5v,i d =5.5a n-ch 20 v ds =-5v,i d = -4a p-ch 13 n-channel n-ch 900 v ds =10v,v gs = 0 v,f = 1.0 mhz p-ch 1130 n-ch 410 p-channel p-ch 480 v ds =-10v,v gs = 0 v,f = 1.0 mhz n-ch 110 p-ch 120 n-channel n-ch 6 12 v dd =6v,i d = 1 a, p-ch 8 16 v gs =4.5v,r gen =6 (note 2) n-ch 19 31 p-ch 23 37 p-channel n-ch 42 67 v dd =-10v,i d = -1 a, p-ch 260 360 v gs =-4.5v,r gen =6 (note 2) n-ch 13 24 p-ch 90 125 n-channel n-ch 19.8 28 v ds =10v,i d =5.5a,v gs =4.5v(note 2) p-ch 20 28 n-ch 2 p-channel p-ch 2.8 v ds =-5v,i d =-4a,v gs =-5v(note 2) n-ch 6.3 p-ch 3.2 nc testconditons ns ns nc nc pf pf ns ns a s pf p-ch v mv/ a na v mv/ m q gd gate-drain charge q g total gate charge gate-source charge q gs t d(off) turn-off delay time t f turn-off fall time t d(on) turn-on delay time tr turn-on rise time c iss c oss c rss input capacitance output capacitance reverse transfer capacitance g fs forward transconductance gate threshold voltage temperature coefficient r ds(on) static drain-source on-resistance i d(on) on-state drain current r ds(on) static drain-source on-resistance v gs(th) gate threshold voltage n-ch b vdss drain-source breakdown voltage breakdown voltage temperature coefficient gate-body leakage i gss i dss zero gate voltage drain current KDS8928A smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 2 of 3 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit n-ch 1.3 p-ch -1.3 v gs =0v,i s = 1.3a (not 2) n-ch 0.68 1.2 v gs =0v,i s = -1.3a (not 2) p-ch -0.7 -1.2 a v testconditons v sd drain-source diode forward voltage i s maximum continuous drain-source diode forward current KDS8928A smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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